mmsd3070 ? small signal diode ? 2011 fairchild semiconductor corporation www.fairchildsemi.com mmsd3070 rev. a1 1 january 2011 mmsd3070 small signal diode absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. thermal characteristics electrical characteristics t a = 25c unless otherwise noted symbol parameter value units v rrm maximum repetitive reverse voltage 200 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 2.0 a a t stg storage temperature range -55 to +150 c t j operating junction temperature 150 c symbol parameter value units p d power dissipation 400 mw r ja thermal resistance, junction to ambient 312 c/w symbol parameter conditions min. max. units v r breakdown voltage i r = 100 a200 v v f forward voltage i f = 100ma 1.0 v i r reverse leakage v r = 175v v r = 175v, t a = 150 c 100 100 na a c t total capacitance v r = 0, f = 1.0mhz 5.0 pf t rr reverse recovery time i f = i r = 30ma, i rr = 1.0ma, r l = 100 50 ns sod123 color band denotes cathode top marking: 33
mmsd3070 ? small signal diode ? 2011 fairchild semiconductor corporation www.fairchildsemi.com mmsd3070 rev. a1 2 typical performan ce characteristics figure 1. forward voltage vs forward current figure 2. reverse current vs reverse voltage figure 3. reverse recovery time vs reverse recovery current
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